Ordering number:EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications · High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications. Features · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=5.0pF). · Wide ASO (Adoption .
· High breakdown voltage (VCEO min=900V).
· Small Cob (Cob typ=5.0pF).
· Wide ASO (Adoption of MBIT process).
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2010C
[2SC3676]
Specifications
JEDEC : TO-220AB EIAJ : SC46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3670 |
Toshiba |
2SC3670 | |
2 | C3671 |
Toshiba |
2SC3671 | |
3 | C3672 |
Toshiba |
2SC3672 | |
4 | C3673 |
Toshiba |
2SC3673 | |
5 | C3675 |
Sanyo Semicon Device |
2SC3675 | |
6 | C3678 |
SavantIC |
2SC3678 | |
7 | C3678 |
Sanken |
2SC3678 | |
8 | C3679 |
Sanken electric |
Silicon NPN Triple Diffused Planar Transistor | |
9 | C3600 |
Sanyo |
2SC3600 | |
10 | C3605 |
Toshiba Semiconductor |
2SC3605 | |
11 | C3606 |
Toshiba |
2SC3606 | |
12 | C3607 |
Toshiba |
2SC3607 |