logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Preview

C3676 - Sanyo

Download Datasheet
Stock / Price

C3676 2SC3676

Ordering number:EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications · High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications. Features · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=5.0pF). · Wide ASO (Adoption .

Features


· High breakdown voltage (VCEO min=900V).
· Small Cob (Cob typ=5.0pF).
· Wide ASO (Adoption of MBIT process).
· High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC3676] Specifications JEDEC : TO-220AB EIAJ : SC46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C .

Related Product

No. Partie # Fabricant Description Fiche Technique
1 C3670
Toshiba
2SC3670 Datasheet
2 C3671
Toshiba
2SC3671 Datasheet
3 C3672
Toshiba
2SC3672 Datasheet
4 C3673
Toshiba
2SC3673 Datasheet
5 C3675
Sanyo Semicon Device
2SC3675 Datasheet
6 C3678
SavantIC
2SC3678 Datasheet
7 C3678
Sanken
2SC3678 Datasheet
8 C3679
Sanken electric
Silicon NPN Triple Diffused Planar Transistor Datasheet
9 C3600
Sanyo
2SC3600 Datasheet
10 C3605
Toshiba Semiconductor
2SC3605 Datasheet
11 C3606
Toshiba
2SC3606 Datasheet
12 C3607
Toshiba
2SC3607 Datasheet
More datasheet from Sanyo
Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact