TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: mm • High DC current gain : hFE = 500 (min) (IC = 400 mA) • Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base volta.
bsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SC3673 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capaci.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3670 |
Toshiba |
2SC3670 | |
2 | C3671 |
Toshiba |
2SC3671 | |
3 | C3672 |
Toshiba |
2SC3672 | |
4 | C3675 |
Sanyo Semicon Device |
2SC3675 | |
5 | C3676 |
Sanyo |
2SC3676 | |
6 | C3678 |
SavantIC |
2SC3678 | |
7 | C3678 |
Sanken |
2SC3678 | |
8 | C3679 |
Sanken electric |
Silicon NPN Triple Diffused Planar Transistor | |
9 | C3600 |
Sanyo |
2SC3600 | |
10 | C3605 |
Toshiba Semiconductor |
2SC3605 | |
11 | C3606 |
Toshiba |
2SC3606 | |
12 | C3607 |
Toshiba |
2SC3607 |