C3607 - Toshiba

C3607 2SC3607

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 2SC3607 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 9.5dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector cur.

Features

n Typ. Max Unit 5 6.5 ¾ GHz ¾ 15 ¾ dB 6 9.5 ¾ ¾ 1.1 ¾ dB ¾ 1.8 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Collector cut-off current Emitter cut-off current DC current gain Collecter output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note 2) ¾ ¾ 30 ¾ ¾ Note 2: Cre is measured by 3 terminal method with capacitance bridge. Typ. ¾ ¾ ¾ 1.15 0.8 Max 1 1 250 ¾ 1.25 Unit mA mA pF pF 1 2003-03-19 Marking 2SC3607 2 2003-03-19 2SC3607.