C3076 - Toshiba

C3076 2SC3076

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1241 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rati.

Features

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1980-08 1 2013-11-01 2SC3076 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation v.