C3070 - Sanyo Semiconductor Corporation

C3070 2SC3070

Ordering number:EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency, general-purpose amplifier., various drivers, muting circuit. www.DataSheet4U.com Package Dimensions unit:mm 2006A [2SC3070] Features · High DC current gain (hFE=800 to 3200). · Large current c.

Features

· High DC current gain (hFE=800 to 3200).
· Large current capacity (IC=1.2A).
· Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
· High VEBO (VEBO≥15V). EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions B : Base C : Collector E : Emitter SANYO : MP Ratings 30 25 15 1.2 2 240 1 150
  –55 to +150 Unit V.