C3074 - Toshiba Semiconductor

C3074 2SC3074

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector.

Features

tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-08-27 Electrical Characteristics (Ta = 25°C) 2SC3074 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output.