C3075 - Toshiba Semiconductor

C3075 2SC3075

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications Unit: mm • Excellent switching times: tr = 1.0 μs (max) tf = 1.5 μs (max), (IC = 0.5 A) • High collector breakdown voltage: VCEO = 400 V Absolute Maximum R.

Features

eliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-02-05 2SC3075 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown volt.