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C2612 |
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| Part Number | C2612 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collecto... |
| Features |
7 —
—
— — —
—
— — — — —
—
— 1.2 —
Max Unit —V
—V
—V
100 µA 100 µA — — 1.0 V
1.5 V
1.0 µs 2.5 µs 1.0 µs
Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 3 A, IB1 = –IB2 = 0.6 A VBE = –5 V, L = 180 µH, Clamped IE = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 1.5 A*1 VCE = 5 V, IC = 3.0 A*1 IC = 1.5 A, IB = 0.3 A*1 IC = 1.5 A, IB = 0.3 A*1 IC = 3 A, IB1 = –IB2 = 0.6 A, VCC ≅ 150 V Collector power dissipation PC (W) Collector current IC (A) Maximum Collector Dissipation Curve 45 30 15 0 50 100 150 Case temperature TC (°C) 2550µs2µ5s0 1µPsmWsD=C1O0=pme2sr5a°tCi... |
| Document |
 C2612 Data Sheet
PDF 38.58KB |
| Distributor | Stock | Price | Buy |
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