BYV10-60 - STMicroelectronics

BYV10-60 SMALL SIGNAL SCHOTTKY DIODE

Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. DO 41 (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(AV) IFSM Parameter Repetitive Peak Reverse Voltage Average Forward Current* Surg.

Features

A Tj = 25°C Test Conditions VR = VRRM Min. Typ. Max. 0.5 10 0.7 1 V Unit mA DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C
* Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = 0 VR = 5V Min. Typ. 150 40 Max. Unit pF Forward current flow in a schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by stored charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state, current is required to charge the depletion capacitance of the diode. Figure 1. Forward current ve.