BYV10 - NXP

BYV10 Schottky barrier diodes

The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. MIN. MAX. 20 30 40 1 +150 125 V V V A UNIT °C °C 1996 May 13 2.

Features

• Low switching losses
• Fast recovery time
• Guard ring protected
• Hermetically sealed leaded glass package. APPLICATIONS
• Low power, switched-mode power supplies
• Rectifying
• Polarity protection. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYV10-20 BYV10-30 BYV10-40 IF(AV) Tstg Tj Note 1. Refer to SOD81 standard mounting conditions. average forward current storage temperature junction temperature note 1 PARAMETER repetitive peak reverse voltage − − − − −65 − CONDITIONS handbook, 4 columns BYV10 series DESCRIPTION The BYV10-20 to BYV10-40 .