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BYV10-60 |
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| Part Number | BYV10-60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high freque... |
| Features |
A Tj = 25°C Test Conditions VR = VRRM Min. Typ. Max. 0.5 10 0.7 1 V Unit mA
DYNAMIC CHARACTERISTICS
Symbol C Tj = 25°C Tj = 25°C
* Pulse test: tp ≤ 300µs δ < 2%.
Test Conditions VR = 0 VR = 5V
Min.
Typ. 150 40
Max.
Unit pF
Forward current flow in a schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by stored charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state, current is required to charge the depletion capacitance of the diode. Figure 1. Forward current ve... |
| Document |
 BYV10-60 Data Sheet
PDF 82.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BYV10-600P |
NXP |
Ultrafast power diode |
|
| 2 | BYV10-600P |
WeEn |
Ultrafast power diode |
|
| 3 | BYV10-20 |
NXP |
Schottky barrier diodes |
|
| 4 | BYV10-30 |
NXP |
Schottky barrier diodes |
|
| 5 | BYV10-40 |
STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES |
|