BYV10-40 - STMicroelectronics

BYV10-40 SMALL SIGNAL SCHOTTKY DIODES

Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. DO 41 (Glass) ABSOLUTE RATINGS (limiting values) Symbol IF(AV) IFSM Average Forward Current* Surge non Repetitive Forward Current Parameter Tam.

Features

ERISTICS STATIC CHARACTERISTICS Symbol IR
* Tj = 25°C Tj = 100°C VF
* IF = 1A IF = 3A
* Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = VRRM Min. Typ. Max. 0.5 10 Unit mA Tj = 25°C 0.55 0.85 V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Test Conditions VR = 0 Min. Typ. 220 Max. Unit pF Forward current flow in a Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by stored charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state, current is required to charg.