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BYV10-40 |
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| Part Number | BYV10-40 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequ... |
| Features |
ERISTICS STATIC CHARACTERISTICS
Symbol IR * Tj = 25°C Tj = 100°C VF * IF = 1A IF = 3A
* Pulse test: tp ≤ 300µs δ < 2%.
Test Conditions VR = VRRM
Min.
Typ.
Max. 0.5 10
Unit mA
Tj = 25°C
0.55 0.85
V
DYNAMIC CHARACTERISTICS
Symbol C Tj = 25°C Test Conditions VR = 0 Min. Typ. 220 Max. Unit pF
Forward current flow in a Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by stored charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state, current is required to charg... |
| Document |
 BYV10-40 Data Sheet
PDF 72.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BYV10-40 |
NXP |
Schottky barrier diodes |
|
| 2 | BYV10-20 |
NXP |
Schottky barrier diodes |
|
| 3 | BYV10-30 |
NXP |
Schottky barrier diodes |
|
| 4 | BYV10-60 |
STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE |
|
| 5 | BYV10-600P |
NXP |
Ultrafast power diode |
|