www.DataSheet4U.com MAGNA TEC 25.0 +0.1 -0.15 BUZ907 BUZ908 MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET 8.7 Max. 1.50 Typ. 11.60 ± 0.3 10.90 ± 0.1 POWER MOSFETS FOR AUDIO APPLICATIONS 30.2 ± 0.15 Ø 20 M ax. 39.0 ± 1.1 16.9 ± 0.15 1 2 Ø 1.0 FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) .
• HIGH SPEED SWITCHING
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (220V & 250V)
• HIGH ENERGY RATING
R 4.0 ± 0.1
R 4.4 ± 0.2
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODES
• COMPLIMENTARY N
–CHANNEL BUZ902 & BUZ903 Case
– Source
TO
–3
Pin 1
– Gate Pin 2
– Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain
– Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate
– Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction
– Case @ Tcase = 25°C BUZ9.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ90 |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ90 |
INCHANGE |
N-Channel MOSFET | |
3 | BUZ900 |
Magna |
(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET | |
4 | BUZ900DP |
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET | |
5 | BUZ900P |
Magna |
N-CHANNEL POWER MOSFET | |
6 | BUZ900X4S |
ETC |
N-Channel Power MOSFET | |
7 | BUZ901 |
Magna |
(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET | |
8 | BUZ901D |
INCHANGE |
N-Channel MOSFET | |
9 | BUZ901DP |
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET | |
10 | BUZ901P |
Magna |
N-CHANNEL POWER MOSFET | |
11 | BUZ901X4S |
ETC |
N-Channel Power MOSFET | |
12 | BUZ902 |
Magna Tec |
N-Channel MOSFET |