MAGNA TEC 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) BUZ900X4S BUZ901X4S NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET .
• HIGH SPEED SWITCHING
4
3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 )
3
5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 )
R =
4 .0 (0 .1 57 ) (2 P lac e s)
• N
–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
SOT227 Pin 1
– Drain Pin 2
– Source Pin 3
– Gate Pin 4
– Drain
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P
–CHANNEL ALSO AVAILABLE
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain
– S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ900 |
Magna |
(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET | |
2 | BUZ900DP |
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET | |
3 | BUZ900P |
Magna |
N-CHANNEL POWER MOSFET | |
4 | BUZ90 |
Siemens Semiconductor Group |
Power Transistor | |
5 | BUZ90 |
INCHANGE |
N-Channel MOSFET | |
6 | BUZ901 |
Magna |
(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET | |
7 | BUZ901D |
INCHANGE |
N-Channel MOSFET | |
8 | BUZ901DP |
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET | |
9 | BUZ901P |
Magna |
N-CHANNEL POWER MOSFET | |
10 | BUZ901X4S |
ETC |
N-Channel Power MOSFET | |
11 | BUZ902 |
Magna Tec |
N-Channel MOSFET | |
12 | BUZ902D |
Magna Tec |
N-Channel MOSFET |