isc N-Channel Mosfet Transistor BUZ90 ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT .
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Automotive power actuator drivers
·Motor controls
·DC-DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=28℃
4.5
A
IDM
Drain Current-Single Plused
18
A
Ptot
Total Dissipation@TC=25℃
75
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55.
BUZ 90 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ900 |
Magna |
(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET | |
2 | BUZ900DP |
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET | |
3 | BUZ900P |
Magna |
N-CHANNEL POWER MOSFET | |
4 | BUZ900X4S |
ETC |
N-Channel Power MOSFET | |
5 | BUZ901 |
Magna |
(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET | |
6 | BUZ901D |
INCHANGE |
N-Channel MOSFET | |
7 | BUZ901DP |
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET | |
8 | BUZ901P |
Magna |
N-CHANNEL POWER MOSFET | |
9 | BUZ901X4S |
ETC |
N-Channel Power MOSFET | |
10 | BUZ902 |
Magna Tec |
N-Channel MOSFET | |
11 | BUZ902D |
Magna Tec |
N-Channel MOSFET | |
12 | BUZ902DP |
Magna Tec |
N-Channel MOSFET |