BUZ901DP - ETC

BUZ901DP (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET

MAGNA TEC 20.0 5.0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2.0 2 3 2.0 1.0 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECT.

Features

1 2.0 2 3 2.0 1.0
• HIGH SPEED SWITCHING
• N
  –CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING 1.2 0.6 2.8 3.4
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P
  –CHANNEL ALSO AVAILABLE AS BUZ905DP & BUZ906DP
• DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE 5.45 5.45 TO
  –3PBL Pin 1
  – Gate Pin 2
  – Source Case is Source Pin 3
  – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain
  – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate
  – Source Voltage Continuous Drain Current Body Drain Diode Total Power.