MAGNA TEC 20.0 5.0 BUZ902DP BUZ903DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS 1 2.0 2 3 2.0 1.0 FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY.
• HIGH SPEED SWITCHING
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (220V & 250V)
• HIGH ENERGY RATING
1.2 0.6 2.8
3.4
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODES
• COMPLIMENTARY P
–CHANNEL BUZ907DP & BUZ908DP
5.45 5.45
TO-3PBL
Pin 1
– Gate
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Pin 2
– Source Case
– Source
Pin 3
– Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain
– Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate
– Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ903D |
Magna Tec |
N-Channel MOSFET | |
2 | BUZ903 |
Magna Tec |
N-Channel MOSFET | |
3 | BUZ903P |
Magna Tec |
N-Channel MOSFET | |
4 | BUZ90 |
Siemens Semiconductor Group |
Power Transistor | |
5 | BUZ90 |
INCHANGE |
N-Channel MOSFET | |
6 | BUZ900 |
Magna |
(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET | |
7 | BUZ900DP |
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET | |
8 | BUZ900P |
Magna |
N-CHANNEL POWER MOSFET | |
9 | BUZ900X4S |
ETC |
N-Channel Power MOSFET | |
10 | BUZ901 |
Magna |
(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET | |
11 | BUZ901D |
INCHANGE |
N-Channel MOSFET | |
12 | BUZ901DP |
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET |