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BUZ76 - Intersil Corporation

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BUZ76 N-Channel Power MOSFET

BUZ76 Semiconductor Data Sheet October 1998 File Number 2264.1 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as • SOA is Power Dissipation Limited /Subject switching regulators, switching c.

Features


• 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power
• rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as
• SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers,
• Nanosecond Switching Speeds (3A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 400V,
• Linear Transfer Characteristics This type can be operated directly from integrated circuits. 1.800
• High Input Impedance Ohm, N- Formerly developmental type TA17404.
• Majo.

The same part from a different manufacturer

Datasheet BUZ76 - STMicroelectronics BUZ76

BUZ76 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss RoS(on) 10 BUZ76 400 V 1.80 3A • HIGH VOLTAGE.

Datasheet BUZ76 - INCHANGE BUZ76

isc N-Channel Mosfet Transistor BUZ76 ·FEATURES ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resis.

Datasheet BUZ76 - Siemens Semiconductor Group BUZ76

BUZ 76 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ.

Datasheet BUZ76 - COMSET BUZ76

BUZ76 SIPMOS® POWER TRANSISTORS FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance.

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