BUZ76 |
Part Number | BUZ76 |
Manufacturer | Siemens Semiconductor Group |
Description | BUZ 76 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 76 VDS 400 V ID 3A RDS(on) 1.8 Ω Package TO-220 AB Ordering Code C67078-S1... |
Features |
ic Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
400 3 0.1 10 10 1.4 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 1.8
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 2 A
Semiconductor Group
2
07/96
BUZ 76
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteris... |
Document |
BUZ76 Data Sheet
PDF 174.98KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BUZ70 |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ70L |
Siemens Semiconductor Group |
Power Transistor | |
3 | BUZ71 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | BUZ71 |
Siemens Semiconductor Group |
Power Transistor | |
5 | BUZ71 |
Intersil Corporation |
N-Channel Power MOSFET |