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BUZ71S2 |
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| Part Number | BUZ71S2 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUZ 71 S2 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 71 S2 VDS 60 V ID 14 A RDS(on) 0.1 Ω Package TO-220 A... |
| Features |
unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
60 3 0.1 10 10 0.08 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.1
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 9 A
Semiconductor Group
2
07/96
BUZ 71 S2
Not for new design
Electrical Characteristics, at Tj =... |
| Document |
 BUZ71S2 Data Sheet
PDF 130.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ71 |
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| 2 | BUZ71 |
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| 3 | BUZ71 |
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| 4 | BUZ71 |
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