BUZ60 - STMicroelectronics

BUZ60 N-Channel MOSFET

BUZ60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ60 Voss 400 V Ros(on) 1.00 10 5.5 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • ELECTRONIC LAMP BALLAST • DC SWITCH N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very f.

Features

V ±20 V 5.5 A 22 A 75 W -55 to 150 °C 150 °C E 55/150/56 1/4 215 BUZ60 THERMAL DATA Rthj _case Thermal resistance junction-case Rthj _amb Thermal resistance junction-ambient max max 1.67 75 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise specified) Parameters Test Conditions OFF V(BR) DSS Drain-source breakdown voltage ID= 250 p,A VGs= 0 400 IDss Zero gate voltage VDS = Max Rating drain current (VGS = 0) VDS = Max Rating Tj = 125°C IGSS Gate-body leakage current (VDS = 0) VGs= ±20 V ON VGS(th) Gate threshold voltage RDS (on) Static drain-sour.