isc N-Channel Mosfet Transistor ·FEATURES ·11.5A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switchin.
·11.5A, 400V
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·Linear Transfer Characteristics
·High Input Impedance
·Majority Carrier Device
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power
bipolar switching transistors requiring high speed and low gate drive power.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ60 |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ60 |
Intersil Corporation |
N-Channel Power MOSFET | |
3 | BUZ60 |
Infineon Technologies AG |
Power Transistor | |
4 | BUZ60 |
STMicroelectronics |
N-Channel MOSFET | |
5 | BUZ60 |
INCHANGE |
N-Channel MOSFET | |
6 | BUZ60B |
Siemens Semiconductor Group |
Power Transistor | |
7 | BUZ60B |
Intersil Corporation |
N-Channel Power MOSFET | |
8 | BUZ60B |
STMicroelectronics |
N-Channel MOSFET | |
9 | BUZ60B |
INCHANGE |
N-Channel MOSFET | |
10 | BUZ61 |
Siemens Semiconductor Group |
Power Transistor | |
11 | BUZ61 |
Infineon Technologies AG |
Power Transistor | |
12 | BUZ61A |
Siemens Semiconductor Group |
Power Transistor |