BUZ60B - Siemens Semiconductor Group

BUZ60B Power Transistor

BUZ60 Semiconductor Data Sheet October 1998 File Number 2260.1 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 5.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.000Ω (BUZ60 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching conve.

Features

• 5.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power
• rDS(ON) = 1.000Ω (BUZ60 field effect transistor designed for applications such as
• SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Sub
• Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject
• Linear Transfer Characteristics (5.5A, This type can be operated directly from integrated circuits.
• High Input Impedance 400V, Formerly developmental type TA17414.
• Majority Carr.