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Features
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in. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
1000 3 0.1 10 10 3.6 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 1000 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 4
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 2.2 A
Semiconductor Group
2
07/96
BUZ 51
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic ...
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BUZ60 Data Sheet
