BUZ334 - Siemens Semiconductor Group

BUZ334 Power Transistor

www.DataSheet4U.com BUZ 334 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 334 VDS 600 V ID 12 A RDS(on) 0.5 Ω Package TO-218 AA Ordering Code C67078-S3130-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A ID IDpuls 48 TC = 26 °C Pulsed drain current TC =.

Features

unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 600 3 0.1 10 10 0.45 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.5 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 7.5 A Semiconductor Group 2 07/96 www.DataSheet4U.com BUZ 334 Electrical Characteristics, at .