BUZ332A - Siemens Semiconductor Group

BUZ332A Power Transistor

BUZ 332 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated www.DataSheet4U.com Pin 1 G Pin 2 D Pin 3 S Type BUZ 332 A VDS 600 V ID 8A RDS(on) 0.9 Ω Package TO-218 AA Ordering Code C67078-S3123-A4 Maximum Ratings Parameter Continuous drain current Symbol Values 8 Unit A ID IDpuls 32 TC = 33 °C Pulsed drain current TC =.

Features

ecified Parameter Symbol min. Static www.DataSheet4U.com Characteristics Values typ. max. Unit Drain- source breakdown voltage V(BR)DSS 600 3 0.1 10 10 0.8 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.9 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 5 A Semiconductor Group 2 07/96 BUZ 332 A Electrical Characteristics, at Tj = 25°C, unless oth.