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BUZ307 |
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| Part Number | BUZ307 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUZ 307 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 307 VDS 800 V ID 3A RDS(on) 3Ω Package TO-218 AA Ordering Code C67078-S31... |
| Features |
tatic Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
800 3 0.1 10 10 2.7 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 3
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 1.5 A
Semiconductor Group
2
09/96
BUZ 307
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Charact... |
| Document |
 BUZ307 Data Sheet
PDF 212.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ305 |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ305 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | BUZ307 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | BUZ308 |
Siemens Semiconductor Group |
Power Transistor |
|
| 5 | BUZ308 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|