BUZ 102 S SPP52N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 52 A RDS(on) 0.023 Ω Package Ordering Code BUZ 102 S TO-220 AB Q67040-S4011-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain.
case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 1.25 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 90 µA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, T.
BUZ 102S SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain sou.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ102 |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ102AL |
Siemens Semiconductor Group |
Power Transistor | |
3 | BUZ102SL |
Siemens Semiconductor Group |
Power Transistor | |
4 | BUZ102SL-4 |
Siemens Semiconductor Group |
Power Transistor | |
5 | BUZ10 |
STMicroelectronics |
N-Channel Power MOSFET | |
6 | BUZ10 |
Siemens Semiconductor Group |
Power Transistor | |
7 | BUZ10 |
INCHANGE |
N-Channel MOSFET | |
8 | BUZ100 |
Siemens Semiconductor Group |
Power Transistor | |
9 | BUZ100 |
INCHANGE |
N-Channel MOSFET | |
10 | BUZ100L |
Siemens Semiconductor Group |
Power Transistor | |
11 | BUZ100S |
Siemens Semiconductor Group |
Power Transistor | |
12 | BUZ100SL |
Siemens Semiconductor Group |
Power Transistor |