BUZ102SL-4 - Siemens Semiconductor Group

BUZ102SL-4 Power Transistor

Preliminary data BUZ 102SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 102SL-4 VDS 55 V ID 6.2 A RDS(on) 0.033 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 6.2 Unit A ID IDpuls 24.8 .

Features

ing point 1) Thermal resistance, junction - ambient 2) Values typ. max. tbd 62.5 K/W Unit RthJS RthJA - 1) Device on 50mm
*50mm
*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 55 1.6 0.1 10 0.025 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 90 µA Zero gate voltage drain cu.