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BUZ102S |
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| Part Number | BUZ102S |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUZ 102 S SPP52N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type V... |
| Features |
case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
°C
≤ 1.25 ≤ 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 90 µA
V GS(th)
2.1
IDSS
3
4 µA
Zero gate voltage drain current
V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, T... |
| Document |
 BUZ102S Data Sheet
PDF 123.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUZ102 |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ102AL |
Siemens Semiconductor Group |
Power Transistor |
|
| 3 | BUZ102S |
Infineon |
Power Transistor |
|
| 4 | BUZ102SL |
Siemens Semiconductor Group |
Power Transistor |
|
| 5 | BUZ102SL-4 |
Siemens Semiconductor Group |
Power Transistor |
|