BUZ102 - Siemens Semiconductor Group

BUZ102 Power Transistor

BUZ 102 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 102 Pin 2 D Pin 3 S VDS 50 V ID 42 A RDS(on) 0.023 Ω Package TO-220 AB Ordering Code C67078-S1351-A2 Maximum Ratings Parameter Continuous drain current Symbol.

Features

6 BUZ 102 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 1 10 10 0.017 4 1 100 100 100 V VGS = 0 V, ID, Tj = -40 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA µA nA Ω 0.023 VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 42 A Semic.