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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 18A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCES Collect.
nsistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 18A; IB= 1.8A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 18A; IB= 1.8A VCB= 150V; IE= 0 VCB= 150V; IE= 0;TC=125℃ VEB= 7V; IC= 0 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V Switching times ton Turn-on Time ts Storage Time tf Fall Time IC= 15A; IB1= -IB2= 1.5A; VCC= 60V; tp= 10μs BUW57 MIN TYP. MAX U.
BUW57 - Seme LAB
BUW57 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUW50 |
INCHANGE |
NPN Transistor |
|
| 2 | BUW51 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | BUW51 |
Seme LAB |
NPN MULTI-EPITAXIAL POWER TRANSISTOR |
|
| 4 | BUW52 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | BUW58 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | BUW58 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | BUW1015 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 8 | BUW11 |
INCHANGE |
NPN Transistor |
|
| 9 | BUW11 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | BUW11A |
INCHANGE |
NPN Transistor |
|
| 11 | BUW11A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | BUW11AF |
NXP |
Silicon diffused power transistors |
|