BUW51 - Inchange Semiconductor

BUW51 Silicon NPN Power Transistor

·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.5V) VCEO Colle.

Features

CTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.25A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.9 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector -Base Cutoff Current IEBO Emitter Cutoff Current IC= 10A; IB= 1A VCB= 300V; IE= 0 VCB= 300V; IE= 0;TC=100℃ VEB= 5V; IC= 0 1.4 V 0.5 2.0 mA 1.0 mA Switchi.