BUW13 NPN Transistor Datasheet

BUW13 NPN Transistor

·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter.

Features

SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 10A; IB= 2A VCE= 850V; VBE= 0 VCE= 850V; VBE= 0;TC=125℃ VEB= 9V; IC= 0 hFE-1 DC Current Gain IC= 20mA ; VCE= 5V hFE-2 DC Current Gain IC= 1.5A ; VCE= 5V Switching Times ;Resistive Load ton Turn-on Time ts Storage Time IC= 10A;IB1= -IB2= 2A tf Fall Time BUW13 MIN TYP. MAX UNIT 400 V 1.5 V 1.6 V 1 4 mA 10 mA 10 35 10 35 1.0 μs 4.0 μs 0.8 μs.

The same part from a different manufacturer

BUW13 - SavantIC

·With TO-3PN package www.datasheet4u.com ·High voltage,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulat.

BUW13 - Comset Semiconductors

NPN BUW13 - BUW13A HIGH VOLTAGE, HIGH SPEED POWER TRANSISTOR The BUW13-A are silicon NPN power transistor in TO3PN pack.

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BUW13 - INCHANGE