BUW11F Silicon diffused power transistors Datasheet

BUW11F Silicon diffused power transistors

High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated Front view MSB012 BUW11F; BUW11AF ook, halfpage handbook, halfpage 2 1 MBB008 3 1 2 3 F.

Features

d 4 tp < 20 ms; see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 8 and 9 3 2.5 5 10 32 0.8 A A A A W µs open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 14 2 Philips Semiconductors Product speciﬁcation Silicon diffused power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC .

The same part from a different manufacturer

BUW11F - INCHANGE

·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation .

BUW11F - SavantIC

·With TO-3PFa package www.datasheet4u.com ·High voltage ;high speed APPLICATIONS ·Converters ·Inverters ·Switching regul.

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BUW11F - NXP