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·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.) @IC= 6A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.) @IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .
CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A 0.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 1.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A ;IB= 1.5A 1.5 V ICEO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 250V; IB= 0 VCE= 300V;VBE= -1.5V VCE= 300V;VB.
BUV12 - Seme LAB
BUV12 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUV10 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | BUV10N |
Seme LAB |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
|
| 3 | BUV11 |
Motorola Inc |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR |
|
| 4 | BUV11 |
ON Semiconductor |
SITCHMODE Series NPN Silicon Power Transistor |
|
| 5 | BUV18 |
ST Microelectronics |
NPN High Current Switching Transistors |
|
| 6 | BUV18 |
Seme LAB |
NPN HIGH CURENT SWITCHING TRANSISTORS |
|
| 7 | BUV18 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | BUV18X |
Seme LAB |
Bipolar NPN Device |
|
| 9 | BUV19 |
Seme LAB |
NPN HIGH CURENT SWITCHING TRANSISTORS |
|
| 10 | BUV19 |
ST Microelectronics |
NPN High Current Switching Transistors |
|
| 11 | BUV19 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | BUV20 |
Motorola Inc |
NPN Transistor |
|