Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BUV12 |
Click to view a larger image
| Part Number | BUV12 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.) @IC= 6A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.) @IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and... |
| Features |
CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
250
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
0.6
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 1.5A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A ;IB= 1.5A
1.5
V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 250V; IB= 0
VCE= 300V;VBE= -1.5V VCE= 300V;VB... |
| Document |
 BUV12 Data Sheet
PDF 207.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUV10 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | BUV10N |
Seme LAB |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
|
| 3 | BUV11 |
Motorola Inc |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR |
|
| 4 | BUV11 |
ON Semiconductor |
SITCHMODE Series NPN Silicon Power Transistor |
|
| 5 | BUV12 |
Seme LAB |
Bipolar NPN Device |
|