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BUV19 - Inchange Semiconductor
·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 30A ·High Switching Speed APPLICATIONS ·High efficiency .
BUV19 - Seme LAB
BUV18 BUV19 MECHANICAL DATA Dimensions in mm NPN HIGH CURENT SWITCHING TRANSISTORS 25.15 (0.99) 26.67 (1.05) 10.67 (0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUV10 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | BUV10N |
Seme LAB |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
|
| 3 | BUV11 |
Motorola Inc |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR |
|
| 4 | BUV11 |
ON Semiconductor |
SITCHMODE Series NPN Silicon Power Transistor |
|
| 5 | BUV12 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | BUV12 |
INCHANGE |
NPN Transistor |
|
| 7 | BUV18 |
ST Microelectronics |
NPN High Current Switching Transistors |
|
| 8 | BUV18 |
Seme LAB |
NPN HIGH CURENT SWITCHING TRANSISTORS |
|
| 9 | BUV18 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | BUV18X |
Seme LAB |
Bipolar NPN Device |
|
| 11 | BUV20 |
Motorola Inc |
NPN Transistor |
|
| 12 | BUV20 |
ON Semiconductor |
NPN Silicon Power Transistor |
|