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BUV20 SWITCHMODEt Series NPN Silicon Power Transistor SWITCHMODE series NPN silicon power transistors are designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A = 10 at IC = 50 A • Low VCE(sat): VCE(sat) max. = 0.6 V at IC = 25 A = 0.9 V at IC = 50 A • Very fast switching times: TF = 0.25.
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BUV20 - STMicroelectronics
The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in sw.
BUV20 - Motorola Inc
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV20/D SWITCHMODE Series NPN Silicon Power Transistor ..
BUV20 - Seme LAB
BUV20 MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.
BUV20 - Inchange Semiconductor
·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 25A ·High DC Current Gain- : hFE= 20(Min.)@ IC= 25A ·High.
BUV20 - TT
SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUV20 Hermetic TO3 (TO-204AE) Metal Package High Voltage, High Current, Fast Sw.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUV21 |
Motorola Inc |
40 AMPERES NPN SILICON POWER METAL TRANSISTOR |
|
| 2 | BUV21 |
ON Semiconductor |
NPN Silicon Power Transistor |
|
| 3 | BUV21 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | BUV21 |
ETC |
NPN Silicon Low Frequency High Power Switching Transistor |
|
| 5 | BUV21 |
Semelab |
Bipolar NPN Device |
|
| 6 | BUV21G |
ON Semiconductor |
NPN Silicon Power Transistor |
|
| 7 | BUV22 |
Motorola Inc |
40 AMPERES NPN SILICON POWER METAL TRANSISTOR |
|
| 8 | BUV22 |
ON Semiconductor |
SITCHMODE Series NPN Silicon Power Transistor |
|
| 9 | BUV22 |
ETC |
NPN Silicon Low Frequency High Power Switching Transistor |
|
| 10 | BUV22 |
Semelab |
Bipolar NPN Device |
|
| 11 | BUV22 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | BUV23 |
Motorola Inc |
NPN Transistor |
|