Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage .
nce with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 8 20 4 6 33 150 150 UNIT V V A A A A W ˚C ˚C Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUT12 |
NXP |
Silicon diffused power transistors | |
2 | BUT12 |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) | |
3 | BUT12A |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) | |
4 | BUT12A |
NXP |
Silicon diffused power transistors | |
5 | BUT12AF |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) | |
6 | BUT12AF |
NXP |
Silicon diffused power transistors | |
7 | BUT12AF |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | BUT12AI |
NXP |
Silicon Diffused Power Transistor | |
9 | BUT12AX |
INCHANGE |
NPN Transistor | |
10 | BUT12AX |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | BUT12F |
NXP |
Silicon diffused power transistors | |
12 | BUT12F |
SavantIC |
SILICON POWER TRANSISTOR |