BUT12F SILICON POWER TRANSISTOR Datasheet

BUT12F SILICON POWER TRANSISTOR

·With TO-220Fa package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT12F BUT12AF Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUT12F BUT12A.

Features

stors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT12F IC=0.1A; IB=0;L=25mH BUT12AF BUT12F BUT12AF BUT12F BUT12AF BUT12F BUT12AF IC=6A; IB=1.2A CONDITIONS www.datasheet4u.com BUT12F BUT12AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=5A; IB=1A IC=6A; IB=1.2A 1.5 IC=5A; IB=1A VCE=850V ;VBE=0 Tj=125 VCE=1000V ;VBE=0 Tj=125 VEB=9V; IC=0 IC=10mA ; VCE=5V IC=1A ; VCE=5V 10 10 1.0 3.0 1.0 3.0 10 35 35 V VBEsat Base-emitter saturation voltage V ICES Collector cut-off current mA.

The same part from a different manufacturer

BUT12F - NXP

High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. APPLICATIONS • Converters •.

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BUT12F - SavantIC