High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. handbook, halfpage BUT12F; BUT12AF PINNING PIN 1 2 3 mb base collector emitter mounting base; electrically isolated from all pins DESCRIPTION handbook, halfpage 2 1 MBB008 3 1.
e see Figs 2 and 4 see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 6 5 8 20 23 0.8 A A A A W µs see Figs 7 and 9 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 13 1 Philips Semiconductors Product specification Silicon diffused power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum.
·With TO-220Fa package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regu.
SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUT12A |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) | |
2 | BUT12A |
NXP |
Silicon diffused power transistors | |
3 | BUT12AI |
NXP |
Silicon Diffused Power Transistor | |
4 | BUT12AX |
INCHANGE |
NPN Transistor | |
5 | BUT12AX |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | BUT12 |
NXP |
Silicon diffused power transistors | |
7 | BUT12 |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) | |
8 | BUT12F |
NXP |
Silicon diffused power transistors | |
9 | BUT12F |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | BUT12XI |
NXP |
Silicon Diffused Power Transistor | |
11 | BUT100 |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR | |
12 | BUT100 |
INCHANGE |
NPN Transistor |