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Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage pea.
ith the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 8 20 4 6 110 150 150 UNIT V V A A A A W ˚C ˚C Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. MAX. 1.15 60.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUT12A |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
|
| 2 | BUT12A |
NXP |
Silicon diffused power transistors |
|
| 3 | BUT12AF |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
|
| 4 | BUT12AF |
NXP |
Silicon diffused power transistors |
|
| 5 | BUT12AF |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | BUT12AX |
INCHANGE |
NPN Transistor |
|
| 7 | BUT12AX |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | BUT12 |
NXP |
Silicon diffused power transistors |
|
| 9 | BUT12 |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
|
| 10 | BUT12F |
NXP |
Silicon diffused power transistors |
|
| 11 | BUT12F |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | BUT12XI |
NXP |
Silicon Diffused Power Transistor |
|