BUP54 MECHANICAL DATA Dimensions in mm 3 9 .9 5 (1 .5 7 3 ) m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 ) NPN MULTI-EPITAXIAL TRANSISTOR FEATURES • LOW VCE(SAT) 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 2 6 .6 7 (1 .0 5 0 ) m a x . 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . • FAST SWITCHING • SIN.
• LOW VCE(SAT)
1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 2 6 .6 7 (1 .0 5 0 ) m a x .
4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s .
• FAST SWITCHING
• SINGLE CHIP COSNTRUCTION
• HIGH SWITCHING CURRENTS
• HIGH RELIABILITY
2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 )
• MILITARY OPTIONS AVAILABLE
1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 )
1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 )
1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s .
APPLICATIONS
• SWITCHING REGULATORS
• MOTOR DRIVE CONTROL
TO3B
Pin 1
– Base Pin 2
– Emitter Case
– Collect.
·Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 10A ·High Switching Currents. ·High Reliability. ·Milita.
SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP54 • Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally su.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUP50A |
Seme LAB |
NPN Transistor | |
2 | BUP51 |
INCHANGE |
NPN Transistor | |
3 | BUP51 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR | |
4 | BUP52 |
INCHANGE |
NPN Transistor | |
5 | BUP52 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR | |
6 | BUP53 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR | |
7 | BUP56 |
Seme LAB |
NPN Transistor | |
8 | BUP06CN015E-01 |
Infineon |
60V Radiation Tolerant power MOSFET | |
9 | BUP06CN035L-01 |
Infineon |
60V Radiation Tolerant power MOSFET | |
10 | BUP200 |
Siemens Semiconductor Group |
IGBT | |
11 | BUP200D |
Siemens Semiconductor Group |
IGBT | |
12 | BUP202 |
Siemens Semiconductor Group |
IGBT |