BUP52 - INCHANGE

BUP52 NPN Transistor

·High DC Current Gain- : hFE>20@IC= 20A ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ideally suited for Motor Control, Switching and Linear Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Co.

Features

VCEO(BR) Collector-Emitter Voltage Breakdown IC=10mA; IB=0 IC=20A; IB=2A MIN TYP MAX UNIT 200 V 0.5 VCE(sat) Collector-Emitter Saturation Voltage IC=40A; IB=4A 0.6 V IC=70A; IB=14A 0.9 IC=20A; IB=2A 1.1 VBE(sat) Base-Emitter Saturation Voltage IC=40A; IB=5A 1.2 V IC=70A; IB=15A 1.5 ICBO Collector Cutoff Current IEBO Emitter Cutoff current VCE=300V; VEB=1.5V VCE=300V; VEB=1.5V;TC=150℃ VEB=4V; IC=0 0.1 mA 5 1.0 mA IC=20A ; VCE=4V 20 hFE DC Current Gain IC=40A ; VCE=4V 12 IC=70A ; VCE=4V 8 NOTICE： ISC reserves the rights to make changes of the content herein the.