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·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.
ied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 40A; IB= 4A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 40A; IB= 4A ICEO Collector Cutoff Current VCE= 175V; IB=0 ICBO Collector Cutoff Current VCB= 250V; IE=0 hFE-1 DC Current Gain IC= 20A; VCE.
BUP51 - TT
SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP51 • Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally su.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUP50A |
Seme LAB |
NPN Transistor |
|
| 2 | BUP52 |
INCHANGE |
NPN Transistor |
|
| 3 | BUP52 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
|
| 4 | BUP53 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
|
| 5 | BUP54 |
Seme LAB |
NPN Transistor |
|
| 6 | BUP54 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | BUP54 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
|
| 8 | BUP56 |
Seme LAB |
NPN Transistor |
|
| 9 | BUP06CN015E-01 |
Infineon |
60V Radiation Tolerant power MOSFET |
|
| 10 | BUP06CN035L-01 |
Infineon |
60V Radiation Tolerant power MOSFET |
|
| 11 | BUP200 |
Siemens Semiconductor Group |
IGBT |
|
| 12 | BUP200D |
Siemens Semiconductor Group |
IGBT |
|