logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Preview

BUP53 - TT

Download Datasheet
Stock / Price

BUP53 SILICON MULTI-EPITAXIAL NPN TRANSISTOR

SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 • Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEX Collector – Emitter Voltage VBE = -1.5V 400V VCEO Collector – Emitter Voltage 2.

Features

lab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Document Number 8314 Website: http://www.semelab-tt.com Issue 1 Page 1 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions ICEX Collector Cut-Off Current VCE = 400V VB.

Related Product

No. Partie # Fabricant Description Fiche Technique
1 BUP50A
Seme LAB
NPN Transistor Datasheet
2 BUP51
INCHANGE
NPN Transistor Datasheet
3 BUP51
TT
SILICON MULTI-EPITAXIAL NPN TRANSISTOR Datasheet
4 BUP52
INCHANGE
NPN Transistor Datasheet
5 BUP52
TT
SILICON MULTI-EPITAXIAL NPN TRANSISTOR Datasheet
6 BUP54
Seme LAB
NPN Transistor Datasheet
7 BUP54
Inchange Semiconductor
Silicon NPN Power Transistor Datasheet
8 BUP54
TT
SILICON MULTI-EPITAXIAL NPN TRANSISTOR Datasheet
9 BUP56
Seme LAB
NPN Transistor Datasheet
10 BUP06CN015E-01
Infineon
60V Radiation Tolerant power MOSFET Datasheet
11 BUP06CN035L-01
Infineon
60V Radiation Tolerant power MOSFET Datasheet
12 BUP200
Siemens Semiconductor Group
IGBT Datasheet
More datasheet from TT
Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact