SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 • Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEX Collector – Emitter Voltage VBE = -1.5V 400V VCEO Collector – Emitter Voltage 2.
lab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Document Number 8314 Website: http://www.semelab-tt.com Issue 1 Page 1 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions ICEX Collector Cut-Off Current VCE = 400V VB.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUP50A |
Seme LAB |
NPN Transistor | |
2 | BUP51 |
INCHANGE |
NPN Transistor | |
3 | BUP51 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR | |
4 | BUP52 |
INCHANGE |
NPN Transistor | |
5 | BUP52 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR | |
6 | BUP54 |
Seme LAB |
NPN Transistor | |
7 | BUP54 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
8 | BUP54 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR | |
9 | BUP56 |
Seme LAB |
NPN Transistor | |
10 | BUP06CN015E-01 |
Infineon |
60V Radiation Tolerant power MOSFET | |
11 | BUP06CN035L-01 |
Infineon |
60V Radiation Tolerant power MOSFET | |
12 | BUP200 |
Siemens Semiconductor Group |
IGBT |