N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK436 Drain-source voltage Drain current (DC) Tota.
n Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -200A 19 12 76 125 150 150 MAX. 200 200 30 -200B 17 11 68 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 45 MAX. 1.0 UNIT K/W K/W July 1997 1 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUK436W-200A |
NXP |
PowerMOS transistor | |
2 | BUK436W-1000B |
NXP |
PowerMOS transistor | |
3 | BUK436W-800A |
NXP |
PowerMOS transistor | |
4 | BUK436W-800B |
NXP |
PowerMOS transistor | |
5 | BUK436-100A |
Philips |
PowerMOS transistor | |
6 | BUK436-100A |
INCHANGE |
N-Channel MOSFET | |
7 | BUK436-100B |
Philips |
PowerMOS transistor | |
8 | BUK436-100B |
INCHANGE |
N-Channel MOSFET | |
9 | BUK436-200A |
INCHANGE |
N-Channel MOSFET | |
10 | BUK436-200B |
INCHANGE |
N-Channel MOSFET | |
11 | BUK436-60A |
INCHANGE |
N-Channel MOSFET | |
12 | BUK436-60B |
INCHANGE |
N-Channel MOSFET |