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BUK436W-200B |
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| Part Number | BUK436W-200B |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converter... |
| Features |
n Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -200A 19 12 76 125 150 150 MAX. 200 200 30 -200B 17 11 68 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 45 MAX. 1.0 UNIT K/W K/W
July 1997
1
Rev 1.000
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK436W-200A/B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS I... |
| Document |
 BUK436W-200B Data Sheet
PDF 71.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUK436W-200A |
NXP |
PowerMOS transistor |
|
| 2 | BUK436W-1000B |
NXP |
PowerMOS transistor |
|
| 3 | BUK436W-800A |
NXP |
PowerMOS transistor |
|
| 4 | BUK436W-800B |
NXP |
PowerMOS transistor |
|
| 5 | BUK436-100A |
Philips |
PowerMOS transistor |
|